多晶硅太阳电池转换效率和晶体缺陷相关性  

Correlation between polycrystalline based solar cell conversion efficiency and crystallization defects

作　　者：张映斌[1,2] 熊震[2] 陈奕峰[2] 冯志强[2] 杨平雄[1] 褚君浩[1] 

机构地区：[1]华东师范大学信息科学与技术学院极化材料与器件教育部重点实验室,上海200241 [2]常州天合光能有限公司光伏科学与技术国家重点实验室,江苏常州213031

出　　处：《红外与毫米波学报》2015年第5期551-556,563,共7页Journal of Infrared and Millimeter Waves

基　　金：江苏省自然科学基金青年基金项目(BK20140272);江苏省自然科学基金青年基金项目(BK20140273)~~

摘　　要：多晶硅太阳能电池组件以它显著的综合成本优势被广泛应用.铸锭多晶硅的晶体缺陷特征与其电池转换效率有着强烈的关联性.晶体的底部和顶部缺陷密度高,对应的电池转换效率低（14.5∽15.5%）;晶体中部因为较低的缺陷密度,对应着较高的电池转换效率（16.5∽17.5%）.不同种类的晶体缺陷对电池效率的影响又不尽相同,比如位错等顽固性缺陷会保留至终,而间隙态金属杂质等可去除的缺陷则会在电池制备过程中得以消除.With remarkable advantage of comprehensive cost,multicrystalline based photovoltaic module products become the most competitive and w idely used PV products. A strong correlation w as found betw een crystal defects of multicrystalline silicon and the cell efficiency thereby. The defect density at the bottom and top brick is very high,as a result,the corresponding cell efficiency is low（ 14. 5 ∽ 15. 5%）. The cell efficiency of the w afers from the middle position of brick is high（ 16. 5 ∽ 17. 5%） due to the low defect density. How ever,different kinds of defects exert different influence on the cell performance. For instance,some stable defects（ such as dislocation） w ill survive at the final cell,and some other defects（ such as interstitial metal impurities） are removed during the cell process.

关 键 词：多晶硅 缺陷 少子寿命 电池转换效率 

分 类 号：O77[理学—晶体学]