热退火对溅射法Al-Sn共掺ZnO薄膜光电性能的影响  

Effects of Thermal Annealing on Optical and Electrical Properties of Al-Sn Co-doped ZnO Films by Sputtering

作　　者：姚函妤 沈鸿烈[1] 李金泽[1] 任政[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京211106

出　　处：《南京航空航天大学学报》2015年第5期672-677,共6页Journal of Nanjing University of Aeronautics & Astronautics

基　　金：国家自然科学基金(61176062)资助项目;江苏省前瞻性联合研究项目(BY2013003-08)资助项目;江苏高校优势学科建设工程资助项目

摘　　要：利用射频磁控溅射方法,采用AZO靶和Sn靶共溅射的方法在钠钙玻璃衬底上制备了Al与Sn共掺杂的ZnO（ATZO）薄膜样品,再对样品进行300,350,370,400,500℃5种不同温度和1,2,4h3种不同时间的退火处理。采用X射线衍射仪（X-ray diffraction,XRD）和扫描电子显微镜（Scanning electron microscope,SEM）对其相结构及形貌进行了表征和分析。结果表明,所制备的ATZO薄膜都是六角纤锌矿结构,在（002）方向上表现出择优生长且表面都较为均匀。采用UV-vis分光光度计测试薄膜样品的透过率,结果显示370℃退火2h的样品在400~760nm处有87.09%的最高平均透过率,对应的光学带隙为3.40eV;同时,此样品具有最低的电阻率为4.22×10^-2Ω·cm和最高的载流子浓度和迁移率,分别为6.44×10^20 cm^-3和4.30cm^2/（V·s）。The co-sputtering AZO target with Sn target is used to prepare Al-Sn co-doped ZnO（ATZO）thin film samples by radio frequency（RF）magnetron sputtering.The ATZO films are annealed at different temperatures：300,350,370,400,and 500 ℃ and with different processing time：1,2,4h.Xray diffraction（XRD）and scanning electron microscope（SEM）are used to analyze their morphology and composition.The results show that the ATZO thin films are hexagonal wurtzite structure with（002）preferred orientation and the surfaces of the samples are evenly smooth.The optical property of samples measured by the UV-vis spectrophotometer shows that the sample annealed at 370℃for 2hhas the highest average transmittance of 87.09% at the wavelength of 400—760nm,and the corresponding optical band gap is 3.40 eV.Meanwhile,this sample has the lowest resistivity value of 4.22×10-2Ω·cm,the highest carrier concentration of 6.44×1020 cm-3 and mobility of 4.30cm2/（V·s）,respectively.

关 键 词：ZNO薄膜 共掺杂 光学性能 电学性能 

分 类 号：O484[理学—固体物理] TN304.2[理学—物理]