SOI深槽刻蚀Notching效应的研究  

Study on Notching Effect of Silicon on Insulator Deep Reactive Ion Etching

作　　者：於广军 闻永祥 方佼 李志栓[1] 

机构地区：[1]杭州士兰集成电路有限公司,浙江杭州310083

出　　处：《中国集成电路》2015年第10期61-64,共4页China lntegrated Circuit

摘　　要：本文研究了高频(13.56 MHz)和低频(380 KHz)深槽刻蚀机,对SOI硅片深槽刻蚀横向切口(notching)效应的影响。结果表明:过刻蚀量(OE)在20%时,高频设备发生notching现象,但是随着槽尺寸的增大,notching的横向刻蚀量呈线性下降;低频设备在OE为90%时仍没有明显notching现象。研究表明SF6等离子体频率较低,难以响应高频射频场;以及高频设备刻蚀离子垂直方向性较强,易造成介质层电荷积累是导致notching效应的主要原因。This paper studied the notching effect of SOI（ sihcon on insulator ） deep reactive ion etching through the compari^n between High Frequency （ 13.56 MHz ） and Low Frequency （ 380 KHz ） etching equipments. The re- suits show that notching phenomenon occurred in RF equipment when OE arrives at 20%. And lateral etching dimen- sion presents linear decrease while trench dimension increase. However, notching is not found in LF equipment even if OE up to 90%. There are two possible reasons below lead to notching effect; For one hand, SF6 ions frequency is lower than Radio Frequency which makes it hard to respond to RF field, and on the other hand, it is easier for charge to build up on dielectric because of the greater directional ions in RF equipment.

关 键 词：横向切口效应 深槽刻蚀 低频偏压 微机械系统 

分 类 号：TN305.7[电子电信—物理电子学]