玻璃衬底上制备GaN薄膜的研究进展  

Research Progress of the GaN Thin Film Fabricated on the Glass Substrate

作　　者：汪金[1] 张卿[1] 杨国锋[1] 高淑梅[1] 李果华[1] 

机构地区：[1]江南大学理学院江苏省轻工光电工程技术研究中心,江苏无锡214122

出　　处：《半导体技术》2015年第11期801-809,834,共10页Semiconductor Technology

基　　金：中国博士后科学基金资助项目(2014M561623;2014M551559);江苏省博士后科研资助计划(1401013B);中央高校基本科研业务费专项资金资助项目(JUSRP11408;JUSRP51517)

摘　　要：近年来,Ga N基发光二极管（LED）的发展异常迅速,以玻璃为衬底的LED具有成本低、可大面积化生产等优点而引起了国内外许多科研机构的广泛研究兴趣。但由于普通玻璃较低的软化温度（500~600℃）以及与Ga N之间存在较大的晶格失配问题,一直阻碍其发展。重点综述了玻璃衬底上生长Ga N薄膜的方法以及改善外延层晶体质量的技术。分别介绍了两种在普通玻璃上生长Ga N的方法,即低温生长和局部加热生长,同时详述了采用缓冲层和横向外延过生长（ELO）技术对外延Ga N晶体质量的影响。对局部加热、ELO等技术在玻璃衬底LED方面的应用进行了分析和预测,认为以玻璃为衬底的LED终会取得快速地发展。In recent years,Ga N based light emitting diode（ LED） develops very rapidly. LED on the glass substrate has drawn lots of attention of many domestic and international research institutions due to its low cost,large-scale production and other advantages. However,the large lattice mismatch between the glass and Ga N crystals,and the lower softening temperature of ordinary glass（ 500- 600℃） than other substrates,have been hampered its development. The methods of Ga N thin films depositing on the amorphous glass substrates and the technology of improving the quality of Ga N crystal are presented. Two kinds of methods for the Ga N growth on glass substrates using low temperature growth and local microheating are introduced,and the effect of the application of buffer layer and epitaxial lateral overgrowth（ ELO） technology on the quality of Ga N crystal is also described. The applications of local heating,ELO and other technologies for the LED fabricated on glass substrates are analyzed and predicted. It is believed that the LED fabricated on glass substrates will make a rapid development.

关 键 词：薄膜 氮化镓 玻璃衬底 发光二极管(LED) 横向外延过生长(ELO) 

分 类 号：TN304.23[电子电信—物理电子学]