在片S参数测量系统校准技术研究  

Study on the Calibration Technology of On-wafer S-parameter Measurement System

作　　者：吴爱华[1] 孙静[1] 刘晨[1] 梁法国[1] 郑延秋[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《宇航计测技术》2015年第5期11-16,共6页Journal of Astronautic Metrology and Measurement

摘　　要：在片S参数测量系统在半导体行业裸芯片测量中得到了广泛的应用,但是国内在片S参数测量系统无法有效溯源的现状影响了高端裸芯片产品的研发进度。为了建立该类系统的校准能力,本文研制了微带形式的在片校准件、在片传递标准件和在片检验件三类标准样片,搭建了高准确度的在片S参数传递标准件定标系统,通过HFSS仿真方法使得在片S参数溯源至几何量基准,最终建立了在片S参数测量系统中传输参数的计量校准能力,为最终完成在片S参数测量系统校准奠定了技术基础。On-wafer S-parameter measurement system has been widely applied in bare chip meas-urement in the semiconductor industry, but the current situation of the ineffective traceability of domestic on-wafer S-parameter measurement system has influenced the R＆amp;D process of high-end bare chip prod-ucts. To develop the calibration capacity of this measurement, this paper developed strip on-wafer cali-bration standard, on-wafer transmit calibration standard and on-wafer verification standard, built high ac-curacy on-wafer S-parameter transmit standard calibration system, traced on-wafer S-parameter to geomet-ric basis through HFSS simulation method, and then finally built the calibration capacity with on-wafer S-parameter transmit parameter , laid the technical foundation for completing the on-wafer S-parameter measurement system finally.

关 键 词：在片测量 S参数测量系统 散射参数 校准 裸芯片 

分 类 号：TB973[一般工业技术—计量学]