低导通电阻4H-SiC光导开关  

4H-SiC photoconductive switch with low on-state resistance

作　　者：孙艳玲[1] 杨萌[1] 宋朝阳[2] 石顺祥[1] 郭辉[2] 

机构地区：[1]西安电子科技大学物理与光电工程学院,西安710071 [2]西安电子科技大学微电子学院,西安710071

出　　处：《强激光与粒子束》2015年第12期242-245,共4页High Power Laser and Particle Beams

摘　　要：研制了以4H-SiC为基底材料的同面型光导开关,研究了磷离子注入对器件性能的影响。测试结果表明,采用磷离子注入能够有效降低电极处的体电阻,光导开关单位电极间隙的最小导通电阻为3.17!/mm。实验研究了偏置电压和光脉冲能量对导通电阻的影响,在偏置电压10kV、光能量为30.5mJ的条件下,器件的输出功率超过2.0 MW。结果表明,研制的开关具有输出波形稳定、抖动小、功率大等特点。4H-SiC photoconductive switches with a lateral geometry are fabricated, Phosphate ion implantation is adopted todecrease the resistance. The results show that phosphate ion implantation can effectively reduce the resistance nearing the elec-trode and the minimum unit of the electrode gap on state resistance is 3.17 fl / mm. This experiment shows the bias voltage andoptical pulse energy how to effect the on-state resistance. The power of the device is more than 2.0 MW when the bias voltage is10 kV and the energy of light is 30.5 mJ. The characteristics of the switch output are stable, low jitter and high power. This isof importance to the application of silicon carbide photoconductive switch.

关 键 词：碳化硅光导开 欧姆接触 离子注入 导通电阻 

分 类 号：TN256[电子电信—物理电子学]