CCD小尺寸接触孔金属化的工艺优化  

Optimization on Metallization Process of Small Contact Holes in CCD

作　　者：钟奇志 姜华男[1] 伍明娟[1] 熊玲[1] 朱梦楠 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2015年第5期750-752,共3页Semiconductor Optoelectronics

摘　　要：对铝金属化工艺中存在的台阶覆盖率低和铝穿刺问题进行了讨论和分析,在此基础上对CCD铝金属化工艺进行了优化。采用冷铝+热铝两步淀积的方法,提高了铝膜对小尺寸接触孔的台阶覆盖率;采用TiN作为阻挡层抑制了铝穿刺。The problems as low step coverage and spiking in aluminum metallization were discussed,based on which the process optimizations were performed.Thus better step coverage was obtained by two-step cold/hot aluminum deposition,and spiking was suppressed by using TiN as the barrier layer.

关 键 词：铝金属化 台阶覆盖率 铝穿刺 CCD 

分 类 号：TN386.5[电子电信—物理电子学]