MBE生长GaAs/AlGaAs量子阱材料结构及其光学性能研究  

Study on Structure and Optical Properties of GaAs/AlGaAs Quantum Well Material Grown by MBE

作　　者：张丹[1] 李明[1] 高立明[1] 赵连城[2] 

机构地区：[1]上海交通大学材料科学与工程学院,上海200240 [2]哈尔滨工业大学光电信息材料与量子器件系,哈尔滨150001

出　　处：《半导体光电》2015年第5期765-768,772,共5页Semiconductor Optoelectronics

摘　　要：系统研究了I类组分量子阱结构材料GaAs/AlGaAs的结构设计、材料表征及光学性能。利用分子束外延(MBE)技术生长量子阱材料,原子力显微镜(AFM)测量结果表明样品表面粗糙度达到10-1 nm数量级。X射线双晶衍射测试结果显示材料具备良好的生长质量及晶格完整性。室温光致发光谱探测出量子阱导带电子与价带轻重空穴的复合发光,及施主-受主(D-A)能级间距与GaAs禁带宽度。综合分析结果表明用MBE方法制备实现了与设计结构高度相符的GaAs/Al0.27Ga0.73As量子阱样品,为后期器件设计的精确实现提供了理论依据。The structure design,material characterization and optical properties of I-kind GaAs/AlGaAs quantum well material were investigated.The quantum well material was grown by molecular beam epitaxy（MBE）,and atomic force microscope（AFM）testing shows the magnitude of roughness reaches up to 10-1 nm.X-ray double crystal diffraction testing result shows it owns high growing quality and structure integrity.Room photoluminescence（PL）detects the bandgap of GaAs and the energy level spacing of donor-acceptor（D-A）.The results show the structure parameters of specimen grown by MBE are consistent with the design values so that accurate photoelectronic devices can be achieved.

关 键 词：量子阱 GAAS/ALGAAS 材料表征 光学性能 

分 类 号：TN362[电子电信—物理电子学]