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机构地区:[1]上海交通大学电气工程系电力传输与功率变换控制教育部重点实验室,上海200240
出 处:《电气自动化》2015年第6期56-59,共4页Electrical Automation
摘 要:基于现有的MATLAB/Simulink模型,运用S-函数(System Function),对原IGBT/Diode模型进行改造,设计了一种新的、更加精确的IGBT导通模型,有效地解决了原模型理想导通的弊端,使仿真结果更接近实际。提出了用导通电阻来模拟IGBT导通过程的新思路,触发电压的变化能够实时反映在导通电阻的变化率上,仿真结果证实了这一理论。利用MATLAB/Simulink的封装方法对创建了自定义的IGBT模型,设计了简单的外围电路,对模型进行验证,仿真结果与原模型进行对比,效果明显。最后,用自定义IGBT模型作为开关,建立了雷电流发生电路模型。搭建了硬件测试平台,仿真结果与硬件测试结果进行对比,结果令人满意。Based on the existing MATLAB/Simulink model,by using S-function( System Function) to modify the existing IGBT/Diode model,we have designed a novel,more accurate IGBT turn-on model,thus effectively overcoming the difficulty in achieving ideal conduction in the original model and making simulation results more close to actual situation. In this paper,we propose a new idea for simulating IGBT conduction process through the on-resistance,and variations of the trigger voltage can be reflected on a real-time basis in the variation rate of the on-resistance. The theory is confirmed by simulation results. In the MATLAB/Simulink encapsulating method,we have created a self-defined IGBT model and designed a simple external circuit to verify the model. A comparison between the simulation result and the original model shows that the effect is obvious. Finally,using the self-defined IGBT model as a switch,we have set up a model of lighting current generating circuit,and established a hardware test platform. A comparison between the simulation result and hardware test result shows that a satisfactory result is achieved.
关 键 词:MATLAB/SIMULINK IGBT S-函数 导通电阻 自定义模型
分 类 号:TM85[电气工程—高电压与绝缘技术]
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