极端低温下硅基器件和电路特性研究进展  

The Effect of Cryogenic Temperature Characteristics on Silicon-Based Devices and Circuits

作　　者：解冰清 毕津顺[1] 李博[1] 罗家俊[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2015年第6期789-795,共7页Microelectronics

基　　金：国家自然科学基金资助项目(11179003;61176095)

摘　　要：讨论了在极端低温下,硅基半导体在器件级和电路级特性的研究进展。在器件级,分析了极端低温下体硅器件和SOI器件常规电学特性的异常变化,讨论了一些只在极端低温下出现的特殊效应,如载流子冻结效应,阐述了极端低温下提取器件参数的方法。在电路级,分析了极端低温下反相器、CMOS运算放大器和DRAM的性能相对于常温下的变化,对比了极端低温下不同结构的电路在性能和稳定性方面的差异。最后,介绍了国内外相关研究领域的现状,并提出了未来极端低温微电子技术的发展方向。The progress of the cryogenic temperature characteristics on silicon-based devices and circuits was presented. At device＇s level, a discussion was made on the abnormality of some conventional electronic properties of metal-oxide-semiconductor and silicon-on-insulator devices at cryogenic temperature. Some special effects which happened only at cryogenic temperature, such as the effect of impurity freezing out, were analyzed. A discussion was performed on the extraction methods of some parameters as well. At circuit＇s level, the performances of converter, CMOS op-amps and DRAM at cryogenic temperature were analyzed in detail, which contained the effects of cryogenic temperature on different circuit structures. At last, a discussion was performed on the development direction of cryogenic microelectronics.

关 键 词：极端低温 金属-氧化物-半导体 绝缘体上硅 载流子冻结效应 

分 类 号：TN304.1[电子电信—物理电子学]