30～2600MHz超宽带GaN功率放大器的设计与实现  

Design and Realization of a 30-2600 MHz Ultra-Broadband GaN Power Amplifier

作　　者：陆宇[1] 陈晓娟[2] 钱可伟[1] 

机构地区：[1]电子科技大学电子科学技术研究院,成都611731 [2]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2015年第12期916-920,929,共6页Semiconductor Technology

摘　　要：基于第三代半导体Ga N的高电子迁移率晶体管技术,利用Cree CGH4001O管芯大信号模型并结合ADS2009U1软件,结合商用Ga N管芯的自身特性,采用微带-电阻-微带-电容-微带的负反馈回路和整体负载牵引方法及宽带匹配网络,成功设计并实现了30-2 600 MHz超过6个倍频程的超宽带功率放大器。测试结果表明,该功率放大器的带内线性增益大于11.8 d B,线性增益平坦度小于±0.95 d B,输入回波小于-10.2 d B,1 d B压缩点输出功率大于36.5 d Bm,功率附加效率大于22%,饱和时输出功率大于39.1 d Bm,功率附加效率大于28%。该功率放大器在很宽的频带内有着平坦的增益,适用于对平坦度要求较高的超宽带系统中。Based on Ga N high electron mobility transistor technology of third generation semiconductor,combining Cree’s large signal model of CGH40010 with ADS2009U1 simulation software. According to its own characteristic,a 30- 2 600 MHz ultra-broadband power amplifier（ PA） was designed and realized successfully which was more than 6 octave bandwidth by using micro-strip- resistor- microstrip- capacitor negative feedback loop,a method of load pull with whole feedback loop and broadband matching network. The test results show that at the operation frequency,the linear gain of the PA is more than 11. 8 d B,linear gain flatness is less than ± 0. 95 d B,input return loss is less than- 10. 2d B. At 1 d B compression the output power of the PA is higher than 36. 5 d Bm,the power added effieiency is more than 22%. The power added efficiency is more than 28% with saturation output power of 39. 1 d Bm. This PA has good gain flatness in broadband,it is suitable for ultra-broadband system which is strict in flatness.

关 键 词：氮化镓 超宽带 功率放大器 负反馈 6倍频程 

分 类 号：TN722.75[电子电信—电路与系统]