Au掺杂碲镉汞气相外延生长及电学性能  

Growth of Au-doped Hg_(1-x)Cd_xTe epitaxial crystals and its Raman spectrum

作　　者：王仍[1] 焦翠灵[1] 徐国庆[1] 张莉萍[1] 张可锋[1] 陆液[1] 杜云辰[1] 邵秀华[1] 林杏潮[1] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2015年第4期432-436,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61106097;61204134;11304335);中科院三期创新项目(Q-ZY-87/Q-ZY-88)~~

摘　　要：采用气相外延技术生长Au掺杂的Hg_(1-x)Cd_xTe薄膜材料,利用范德堡法对薄膜材料进行电学性能表征.通过变温霍尔测量,分析了常规Au掺杂p型薄膜的霍尔系数和霍尔迁移率随温度的变化,利用二次离子质谱(SIMS)分析薄膜中Au的纵向分布趋势.讨论了三种反常p型薄膜的霍尔系数和霍尔迁移率随温度的变化.通过变磁场霍尔测量,分析了具有反型层Hg_(1-x)Cd_xTe薄膜的迁移率谱,证实了由于表面电子、体电子以及体空穴混合导电造成的反常霍尔性能.Au-doped Hg_（1-x）Cd_xTe epitaxial layers were grown by vapor phase epitaxial method. The electrical properties of Hg_（1-x）Cd_xTe epitaxial layers were investigated by Hall measurement. Profile of Au in Hg_（1-x）Cd_xTe epitaxial layers was revealed by Secondary ion mass spectroscopy（ SIM S） method. Hall coefficient and Hall mobility of three abnormal P type samples were discussed. M oreover,variable-magnetic-field Hall measurement was performed on Hg_（1-x）Cd_xTe with antitype epitaxial layer. M obility spectrum analysis was employed to verify surface electrons,bulk electrons and bulk holes mixed conduction in Hg_（1-x）Cd_xTe epitaxial layers.

关 键 词：Hg1-xCdxTe晶体 磁输运 迁移率谱 二次离子质谱 

分 类 号：TN213[电子电信—物理电子学]