IGCT晶片的封装结构设计  

Package Structure Design of IGCT Wafer

作　　者：曾文彬[1] 颜骥[1] 任亚东[1] 陈芳林[1] 潘学军[1] 

机构地区：[1]株洲南车时代电气股份有限公司,湖南株洲412001

出　　处：《大功率变流技术》2015年第6期20-24,共5页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：IGCT的晶片结构不同于普通的晶闸管及二极管,因此其封装结构需要独特的设计,包括用于绝缘并传递压力的绝缘件、用于施加压力并保持压力稳定的弹性件以及用于组装并与外接口的管座等。这种独特的封装结构设计经过验证及考核,有效提升了IGCT性能,满足其应用要求。Wafer structure of IGCT is different from that of the ordinary thyristor and diode, so there are some particular designs on the package structure of IGCT, which includes insulated part used for insulation and transferring stress, stretch part used for inflicting stress and maintaining its stability, and socket used for assembly and outside connecting. All designs have been tested and validated, and the results show that it upgrades the capability of IGCT and makes it satisfy the application.

关 键 词：IGCT 封装结构 绝缘 弹簧 

分 类 号：TN34[电子电信—物理电子学]