优质高稳定性微晶硅薄膜的制备  

Preparation of the high-quality and stable microcrystalline silicon films

作　　者：祝祖送[1] 张杰[1] 易明芳[1] 尹训昌[1] 闻军[1] 

机构地区：[1]安庆师范学院物理与电气工程学院,安庆246011

出　　处：《四川大学学报（自然科学版）》2016年第1期157-162,共6页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(11447197);安徽省教育厅基金(AQKJ2014B019);安徽省自然科学基金(1608085MA21)

摘　　要：对以SiCl_4和H_2为源气体、采用等离子体增强化学气相沉积(PECVD)技术在低温快速沉积优质高稳定性的微晶硅薄膜进行了研究.在低于250℃下,成功制备出了沉积速率高达0.28nm/s、晶化度达80%以上的微晶硅薄膜.通过光照实验,表明该微晶硅薄膜光致电导率基本保持恒定;通过对气流分布进行调节,微晶硅薄膜的均匀性得到明显改善,均匀度高达95%.High-quality microcrystalline silicon films with improved stability were prepared by plasma enhanced chemical vapour deposition technique from SiCl4/H2 under 250℃, at a higher rate over 0.28nm/ s, with a crystalline fraction of 80%. The photoconductivity of the microcrystalline silicon films keeps a constance after 540min long light soaking. The thickness uniformity of films was markedly improved （more than 95%） by altering the distribution of pore.

关 键 词：微晶硅薄膜 光照稳定性 均匀性 PECVD 

分 类 号：O433[机械工程—光学工程]