金迁移诱致谐波混频器失效分析研究  被引量:3

Failure Analysis of Harmonically Mixer Caused by Au Electromigration

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作  者:席善斌[1,2] 高金环[1,2] 裴选[1,2] 高兆丰[1,2] 黄杰[1,2] 

机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]国家半导体器件质量监督检验中心,石家庄050051

出  处:《环境技术》2015年第6期43-46,共4页Environmental Technology

摘  要:对用于某下变频器模块中的HMC264型谐波混频器开展了失效分析研究。结果表明,混频器增益下降、电流增大是由于混频器芯片表面产生金迁移并将相邻金属化条跨接所致。混频器芯片表面产生金属迁移是因为芯片表面有液体聚集现象存在,加电使用过程中,金属化层材料Au在电场及残留液体共同作用下发生迁移所致。借助扫描电镜对电迁移形貌及元素成分进行了分析,并对电迁移相关的失效机理进行了讨论,最后对预防电迁移所导致的失效提出了预防和改进措施。The failure analysis of HMC264 harmonically mixer used in the module of a lower frequency converter is carried out. The results show that the gain of the mixer is decreased and the current is increased, which is due to the cross connection between adjacent metal strip caused by Au electromigration. Due to the presence of liquid aggregation on the surface of the chip, and in the process of adding electric power, the metal of Au in the metal layer transfers in the interaction of the electric field and the residual liquid. By means of scanning electron microscopy, the morphology and composition of the elements is analyzed, and the failure mechanism is also to be discussed. Finally, the prevention and improvement measures for the prevention of Au electromigration are proposed.

关 键 词:金迁移 谐波混频器 失效分析 电子风力 

分 类 号:TN406[电子电信—微电子学与固体电子学]

 

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