GaZnO透明导电层提高绿光LED发光效率  

Improvement of Emission Efficiency of the Green LED by GaZnO Transparent Conductive Layer

作　　者：张李骊[1] 刘战辉[1] 钟霞[1] 修向前[2] 张荣[2] 谢自力[2] 

机构地区：[1]南京信息工程大学物理与光电工程学院,南京210044 [2]南京大学电子科学与工程学院江苏省光电信息功能材料重点实验室,南京210093

出　　处：《半导体技术》2016年第1期51-56,62,共7页Semiconductor Technology

基　　金：国家自然科学基金青年科学基金资助项目(21203098)

摘　　要：详细研究了分别利用Ga Zn O薄膜和纳米级Ni/Au薄膜作为透明导电层(TCL)的绿光LED芯片的光电性能。利用扫描电子显微镜和透射光谱对Ga Zn O TCL和传统的纳米级Ni/Au TCL进行结构表征,结果表明,Ga Zn O透明导电层表面呈现为高密度、纳米尺度的突起,而纳米级Ni/Au TCL样品表面则较为平整;研究波长范围内,Ga Zn O薄膜具有较高的透射率(大于90%)。对两种LED芯片的光电特性进行测试,结果表明,Ga Zn O作为透明导电层的LED芯片发光均匀,具有较小的正向开启电压、等效串联电阻,发光峰中心波长变化仅有5.6 nm,而发光效率相对于传统的Ni/Au TCL LED提高40%,光电工作特性优异。Ga-doped Zn O films（ Ga Zn O） and nano-scale Ni / Au layers were used as transparent conductive layer（ TCL）,and the optoelectronic properties of the green light-emitting diodes（ LEDs）with two type TCLs were investigated. The structures of Ga Zn O films and traditional nano-scale Ni / Au films were characterized by the scanning electron microscopy（ SEM） and transmission spectra measurements. The results show that the surface of Ga Zn O TCL exhibits high density nano-scale protrusion structure and excellent transparency（ more than 90%） in the studied spectral range. But the Ni / Au TCL has smooth surface. The optoelectronic investigations of two LED devices show that the LEDs with Ga Zn O TCL have good luminance uniformity,small series resistances,low turn-on voltages,smaller spectral shift range（ about 5. 6 nm） and the light output efficiency is improved about 40% of magnitude as compared to conventional LEDs with Ni / Au TCL.

关 键 词：绿光发光二极管(LED) 镓掺杂氧化锌(GaZnO)薄膜 发光效率 透明导电层(TCL) 多量子阱(MQW) 

分 类 号：TN304[电子电信—物理电子学]