玻片基板温度对磷掺杂真空蒸镀多晶硅薄膜的影响  

Influences of Temperatures of Glass Substrate on Polycrystalline Silicon Thin Films Doped with Phosphorus by Vacuum Evaporation Plating

作　　者：迟建华 骆旭梁 王思源[2] 付传起[2] 王宙[2] 

机构地区：[1]大连开发区大开产业发展研究中心,辽宁大连116600 [2]大连大学表面工程中心,辽宁大连116622

出　　处：《材料保护》2015年第12期57-58,8-9,共2页Materials Protection

基　　金：金州新区科技计划高新技术研究开发计划.培育专项(2013-GX1-002)资助

摘　　要：为进一步提高多晶硅薄膜的晶化率,采用真空蒸镀法结合金属铝诱导退火处理在玻璃衬底上制备了掺杂磷的多晶硅薄膜。采用扫描电镜、激光拉曼光谱仪等研究了基板温度对磷掺杂多晶硅薄膜的组织、形貌、晶粒尺寸及晶化率的影响。结果表明:随基板温度升高,薄膜的晶粒大小和晶化率呈先增大后减小的趋势,基板温度为150℃时,晶粒尺寸显著增大,达0.45μm左右,且具有较高的结晶度,薄膜晶化率可高达94.95%。Polycrystalline silicon thin films doped with phosphorus were prepared by vacuum evaporation and subsequent aluminum induced annealing treatment on glass substrate. The effects of the substrate temperatureon the structures,morphologies,grain sizes and crystalline volume fraction of the films were analyzed by scanning electron microscopy,X-ray diffraction and Raman spectroscopy,respectively. Results showed that with the increase of substrate temperature,grain size and crystalline volume fraction firstly increased and then decreased. Besides,when the substrate temperature was150 ℃,the grain size increased significantly to 0. 45 μm,and the crystalline volume fraction of the film rose up to 94. 95%.

关 键 词：多晶硅薄膜 基板温度 磷掺杂 真空蒸镀 晶化率 

分 类 号：TB306[一般工业技术—材料科学与工程] TB383.2