磷含量对真空蒸镀磷掺杂多晶硅薄膜的影响  

Effect of Phosphorus Content on Phosphorus-doped Polycrystalline Silicon Thin Films Prepared by Vacuum Evaporation

作　　者：骆旭梁 王思源[1] 王宙[1] 雍帆 付传起[1] 

机构地区：[1]大连大学表面工程中心,大连116622

出　　处：《材料导报》2016年第2期53-55,84,共4页Materials Reports

基　　金：金州新区科技计划高新技术研究开发计划.培育专项(2013-GX1-002)

摘　　要：采用真空蒸镀的方法制备磷掺杂多晶硅薄膜,研究了磷含量对多晶硅薄膜的表面形貌、组织结构、晶粒尺寸及晶化率的影响。结果表明:随着磷掺杂分数的增加,多晶硅薄膜的晶粒尺寸和晶化率表现出先增加后降低的趋势,当磷掺杂分数为1%时,薄膜晶粒尺寸达到最大值,为0.55μm,晶化率为96.82%,且晶粒的均匀性最佳。Polycrystalline silicon thin films doped with phosphorus were prepared by vacuum evaporation and a- luminum induced crystallization in order to improve the crystalline volume fraction of the films. This study examined the microstructure, organizational structure, grain size and crystalline volume fraction of polycrystalline silicon thin films that have phosphorus content of 0-2 wt%. The results show that with increase of phosphorus content, grain size and crystalline volume fraction firstly increase then decrease. The grain size and the crystalline volume fraction of the film reach the maximum values of 0.55μm and 96. 82% at the phosphorus doping fraction 1 %, and the uniformity of crystal grains is the best.

关 键 词：真空蒸镀 多晶硅薄膜 磷掺杂 晶化率 

分 类 号：TQ174[化学工程—陶瓷工业]