射频反应磁控溅射法制备ZnO:Al透明导电薄膜的光电性能  

Microstructure and Optical and Electrical Properties of Al-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering Method

作　　者：徐绍亮 庞晓露[1] 杨会生[1] 张波萍[1] 

机构地区：[1]北京科技大学,北京100083

出　　处：《稀有金属材料与工程》2011年第S1期451-454,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50972012);国家"863"计划项目(2009AA03Z216)

摘　　要：室温下采用射频(RF)反应磁控溅射技术在玻璃衬底上沉积具有(002)择优取向的透明导电Al掺杂ZnO(AZO)薄膜。XRD结果表明,制备的AZO薄膜为多晶,具有c轴择优取向。退火处理能提高其结晶度。在Al靶射频功率为40W,ZnO靶射频功率为250W,氩气流量为15mL/min的条件下,获得200nm厚的薄膜电阻率约3.8×10-3?·cm,在可见光范围内有很好的光透过率。Transparent conductive Al-doped zinc oxide (AZO) films have been deposited on glass substrates at room temperature by the radio frequency (RF) magnetron sputtering method. XRD results show that the obtained films are poly-crystalline with c-axis orientation growth. The crystallinity of AZO thin films can be improved after annealing. The AZO film samples show fine electrical resistivity ~ 3.8×10-3Ω·cm, and exhibit optical transmittance of >80% in the visible range.

关 键 词：射频反应磁控溅射 透明导电薄膜 AZO薄膜 光电性能 

分 类 号：O484.4[理学—固体物理]