PECVD制备非晶硅薄膜的均匀性控制方法研究  

Study on Uniformity Control of Amorphous Silicon Thin Films by PECVD

作　　者：陈德军[1] 刘爽[1] 刘永[1] 何存玉 尹潘薇 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]成都言伯科技有限公司,成都610031

出　　处：《半导体光电》2015年第6期951-953,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61177035;61421002);四川省科技项目(2011GZ0003;2012GZ0051);中电集团CCD研发中心项目

摘　　要：针对用于制备非晶硅薄膜的PECVD设备反应室的流体场进行了模拟仿真,并实验制备了相对应条件下的非晶硅薄膜,利用台阶仪完成了对薄膜厚度的测量,对比仿真结果,发现薄膜的厚度分布情况与基片表面附近的气流分布情况密切相关,获得均匀性优于2.5%非晶硅薄膜。The reaction chamber of PECVD equipment was simulated by using Fluent software and amorphous silicon thin films were prepared by PECVD.The film thickness was measured by step apparatus,and by comparing with the simulation results,it indicates that the thickness distribution and airflow distribution of the substrate surface near the film is closely related,and the intake flow of the reaction is positively correlated with the chamber deposition rate.The amorphous silicon thin films with the uniformity higher than 2.5% were obtained.

关 键 词：非晶硅薄膜 PECVD 均匀性 

分 类 号：TB383.2[一般工业技术—材料科学与工程]