氮化铝基陶瓷覆铜板的制作及其应用  

Manufacturing Technologies and Applications of AlN DBC Substrates

作　　者：李磊 吴济钧[2] 李国刚 许立菊 

机构地区：[1]淄博市临淄银河高技术开发有限公司,山东淄博255400 [2]西安电力电子技术研究所,陕西西安710061

出　　处：《真空电子技术》2015年第6期50-53,共4页Vacuum Electronics

摘　　要：AlN陶瓷是一种共价键较强的非氧化合物,具有良好的化学稳定性,因此A1N陶瓷很难在高温和氧气氛下与Cu直接键合制成氮化铝基陶瓷覆铜板(AlN DBC基板)。若在A1N基片表面上预制一定厚度、且非常致密的Al_2O_3层后,就能借鉴Cu箔和Al_2O_3基片高温键合工艺制作性能优良的AlN DBC基板。本文简要阐述了银河公司在制作AlN DBC基板过程中采用的化学氧化法,高温氧化法,循环温差交替降温法,磁控溅射法等工艺技术,还简要介绍了本公司生产的AlN DBC基板的规格和主要技术参数及其在电力半导体模块中的应用实例。The aluminum nitride（AIN） ceramic is an oxygen-free compound with strong covalent bond.It has good chemical stability.and so it is very difficult to directly bond copper on AIN ceramic substrate under high temperature in oxygen atmosphere to make AIN DBC substrates.If a very dense Al_2O_3 layer with a certain thickness is predeposited on AIN substrate,AIN DBC substrates with excellent properties can then be fabricated by using manufacturing technology of high temperature bonding between copper foil and Al_2O_3 layer.Chemical oxidation technology,high temperature oxidation technology,temperature reduction of cycling temperature difference and magnetron sputtering technology for AIN DBC substrates fabrication in Yinhe company are briefly introduced in this paper.Specifications and main technical parameters of the AIN DBC substrates are presented,and some applications of them in power semiconductor modules are also given.

关 键 词：氮化铝基陶瓷覆铜板 高温氧化工艺 高温键合工艺 电力半导体模块 化学氧化工艺 铜箔 氮化铝陶瓷基片 

分 类 号：TN105[电子电信—物理电子学]