亚微米间距PECVD填隙工艺研究  

Study on Sub-Micron Gap-Filling by PECVD

作　　者：王学毅[1,2] 王飞[1,2] 冉明[1,2] 刘嵘侃[1,2] 杨永晖[1,2] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400050 [2]重庆中科渝芯电子有限公司,重庆400060

出　　处：《微纳电子技术》2016年第1期60-63,共4页Micronanoelectronic Technology

摘　　要：将半导体制造中常规的等离子增强化学气相淀积(PECVD)SiO_2工艺和等离子反应离子刻蚀(RIE)SiO_2工艺结合起来,利用三步填充法实现亚微米间距的金属间介质填充制作。此方法有效解决了常规微米级等离子增强化学气相淀积工艺填充亚微米金属条间隙的空洞问题。实验结果表明,在尺寸大于0.5μm的金属条间隙中没有发现介质填充的空洞问题。空洞问题的解决,使得"三步填充法"的介质填充技术在工艺中能够实用化,并应用到亚微米多层金属布线工艺当中。Through combining the conventional plasma enhanced chemical vapor deposition（PECVD）SiO2 process and reactive ion etching（RIE）SiO2 in semiconductor manufacturing,the intermetal dielectric（IMD）filling production with submicron gap was realized by three-step method.Using the method,the voids in the gap filling of the submicron metal bar filled by PECVD was effectively solved.The experimental results show that the voids of the dielectric filling is not observed in the gap of larger than0.5μm between the metal bars,indicating that the dielectric filling by three-step method can realize practicality and be applied in the submicron multilayer metal wiring process.

关 键 词：等离子增强化学气相淀积(PECVD) 二氧化硅(SiO2) 反应离子刻蚀(RIE) 三步填充法 亚微米间隙 金属间介质(IMD) 空洞 

分 类 号：TN304.055[电子电信—物理电子学]