单靶溅射法制备CIS薄膜  

Fabrication of CIS thin film by sputtering one ternary target

作　　者：吴兆[1] 洪瑞江[1] 

机构地区：[1]中山大学太阳能系统研究所广东省光伏技术重点实验室,广州510006

出　　处：《科技导报》2016年第2期43-45,共3页Science & Technology Review

基　　金：广东省科技计划项目(2014A010106009);广东省教育厅项目(2013CX2DA002)

摘　　要：通过单靶一步溅射再退火的方法,在钠钙玻璃及镀钼玻璃衬底上制备了铜铟硒(CIS)薄膜。通过优化工艺参数,获得了结晶性良好的CIS薄膜,分析了溅射沉积薄膜时衬底温度及不同退火温度对薄膜结晶性的影响。研究发现,衬底温度为150℃时,退火获得的CIS薄膜结晶性最好;不同的退火温度对Mo衬底上的CIS薄膜结晶性影响不大。结果表明,靶材的致密度对CIS薄膜性能有较大的影响,说明一步法制备CIS薄膜对靶材有较高的质量要求。The CIGS solar cells have drew much attention recently because of its specific advantages such as high efficiency, good performance under low illumination, resistance to radiation and flexible bandgap. The CIGS absorber layer can be fabricated by coevaporation, sputtering, electrical deposition and many other methods and sputtering is considered to be the most suitable way for large scale fabrication. In this paper CIS thin films were deposited on both SLG and Mo coated SLG substrates by sputtering one ternary target followed by post annealing. CIS thin film with good crystallinity under optimal process parameters was obtained. The effects of different substrate temperatures in deposition process and annealing temperature on the crystallization of the thin films were investigated. We found that the crystallinity of the CIS thin film deposited at 150℃ was improved after post annealing while the annealing temperature had slight effect on the crystallization of CIS thin film on Mo coated SLG substrate. The result also shows that density of the target has significant influence while sputtering ternary target.

关 键 词：铜铟硒 磁控溅射 退火 三元靶材 

分 类 号：TM914.42[电气工程—电力电子与电力传动]