液相外延制备的InAs0.94Sb0.06薄膜的光学性质  

Investigations on optical properties of LPE-grown InAs_(0.94)Sb_(0.06) film

作　　者：吕英飞[1] 周炜[1] 王洋[1] 俞国林[1] 胡淑红[1] 戴宁[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2016年第1期42-46,128,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61274139,61290304,11304335);中科院上海技术物理研究所创新专项(Q-ZY-127)~~

摘　　要：采用液相外延方法在In As衬底上制备了In As0.94Sb0.06外延薄膜.分别通过高分辨率X射线衍射谱和扫描电子显微镜测试对样品的结构特性和截面形貌进行表征分析,外延薄膜的晶体质量较好.利用样品在3 000-6 000 nm波段内的椭圆偏振光谱,结合介电函数模型,拟合得到了室温下In As衬底和In As0.94Sb0.06薄膜位于禁带位置附近的的折射率和消光系数光谱.由禁带位置附近的折射率能量增强效应确定In As0.94Sb0.06薄膜的禁带宽度为0.308 e V.High quality In As0. 94Sb0. 06 films were grown on In As substrates by the liquid phase epitaxy technique. The structural characteristics and cross-section morphology of In As0. 94Sb0. 06 samples were investigated by high-resolution x-ray diffraction measurements and scanning electronic microscopy measurements,respectively. The refractive index and extinction coefficient spectra of In As0. 94Sb0. 06 film near the energy band gap were obtained by fitting room temperature infrared spectroscopic ellipsometry with the model of dielectric function in the range of 3 000 to 6 000 nm. The energy band gap of In As0. 94Sb0. 06 was 0. 308 e V,which was determined by refractive enhancement.

关 键 词：液相外延 铟砷锑薄膜 红外椭偏 光学性质 

分 类 号：O472.3[理学—半导体物理]