两种增强肖特基二级管芯片稳定性的设计方法  

Two Design Methods of Enhancing the Stability of the Chip of Schottky Diode

作　　者：张聪[1] 李东华[1] 陈守迎 

机构地区：[1]济南市半导体元件实验所,山东济南250014

出　　处：《电子产品可靠性与环境试验》2016年第1期40-43,共4页Electronic Product Reliability and Environmental Testing

摘　　要：首先,介绍了肖特基二极管的基本原理和主要性能;然后,利用扩散势垒和多层金属化结构设计工艺对肖特基二极管进行了改进。结果表明,上述两种工艺能够使得肖特基势垒界面横向结构十分稳定,器件高温反向特性、低温正向特性得到提高,反向耐压与抗浪涌冲击能力大大增强,因而建议大力推广使用。Firstly, the basic principle and main performance of schottky diode are introduced.And then, the diffusion barrier and multi-layer metal structure design process are adopted to improve the schottky diode. The results show that the two design methods can make the lateral structure of the schottky barrier interface very stable, improve the high temperature reverse char-acteristic and low temperature positive characteristic of the device, and greatly enhance reverse voltage endurance capability and anti surge impact capability, which are worthy to be popularized.

关 键 词：肖特基二级管 扩散势垒 多层金属化 反向耐压 高温性能 可靠性 

分 类 号：TN311.7[电子电信—物理电子学]