LTCC电路片焊接裂纹分析与优化  

Welding Crack Analysis and Optimization of LTCC Chip

作　　者：谭继勇[1] 张强[1] 刘兵[1] 

机构地区：[1]中国电子科技集团公司第二十九研究所,四川成都610036

出　　处：《电子工艺技术》2016年第1期11-16,共6页Electronics Process Technology

摘　　要：低温共烧陶瓷技术是1982年开始发展起来的组件集成技术,已成为无源集成的主流技术。然而封装金属的热膨胀系数却难以与LTCC匹配,造成焊接时的极大热应力,甚至导致LTCC的裂纹损伤。通过对某LTCC电路片焊接案例的实验及仿真对比,发现热应力是LTCC开裂的主要原因。通过仿真优化,对LTCC电路片及封装金属的结构参数进行改进设计,最终解决了LTCC焊接开裂的问题。对LTCC开裂问题的分析过程及结论对类似问题都具有较大的参考意义。As a components integration technique, Low Temperature Co-firing Ceramic （LTCC） technology was developed in 1982, which has become one of the key technologies for passive integration in recent years. For the LTCC circuit welding, if the thermal expansion coefficient of the encapsulating metal is different from the LTCC chip, this will result in the generation of thermal stress, even the crack damage of LTCC chip. The experimental and finite element simulation （FEM） methods have been applied on the LTCC circuit welding case. Both analysis results show that the thermal stress is the major reason for the LTCC cracking. And the FEM method is deemed to possess satisfying accuracy to analyze the thermodynamic behavior of the LTCC chip. Based on the FEM method and a comparative analysis, the structural parameters of the LTCC chip and encapsulating metal have been designed optimally to solve this problem. Therefore, the presented analysis provides meaningful guidance to assist the design and manufacture of LTCC chip in electronic equipment applications.

关 键 词：LTCC 裂纹 对比分析 优化设计 

分 类 号：TN4[电子电信—微电子学与固体电子学]