碳化硅RSD的二维数值模型研究  

Research on Two-dimensional Numerical Model of Silicon Carbide Reversely Switched Dynistor

作　　者：梁琳[1] 刘程[1] 

机构地区：[1]华中科技大学,光学与电子信息学院,湖北武汉430074

出　　处：《电力电子技术》2016年第1期105-108,共4页Power Electronics

基　　金：国家自然科学基金(51377069);台达环境与教育基金会《电力电子科教发展计划》(DREG2013004)~~

摘　　要：在此通过实验进一步证实了高耐压的硅基反向开关晶体管(RSD)有更高的开通电压峰值,说明采用宽禁带碳化硅(SiC)的必要性。基于半导体物理基本方程,考虑载流子迁移率模型、SRH复合、俄歇复合、碰撞电离效应及禁带变窄效应等,采用典型4H-SiC材料物理参数,建立了SiC RSD二维数值模型,同时结合电路模型模拟了SiC RSD的开通过程,得到不同耐压等级的SiC RSD的开通电压、电流波形。It is proved by experiment in further that the Si reversely switched dynistor（RSD） with high blocking voltage has high maximum of tum-on voltage,which illustrates the necessity of application for wide bandgap silicon carbide（SiC）.Based on the basic semiconductor physical equations,considered the carrier mobility models,SRH recombination,Auger recombination,impact ionization effect and bandgap narrowing effect,etc,using typical 4H-SiC material parameters,the two-dimensional numerical model for SiC RSD is established.Combined with the circuit model,the tum-on process of SiC RSD is simulated.The turn-on voltage current waveforms are acquired for SiC RSD with different blocking voltage.

关 键 词：反向开关晶体管 碳化硅 数值模型 

分 类 号：TN32[电子电信—物理电子学]