宽禁带半导体器件研究现状与展望  

Research on Wide-Bandgap Power Devices: Current Status and Future Forecasts

作　　者：朱梓悦[1] 秦海鸿[1] 董耀文[1] 严仰光[1] 徐华娟[1] 

机构地区：[1]多电飞机电气系统工业和信息化部重点实验室,南京210016

出　　处：《电气工程学报》2016年第1期1-11,共11页Journal of Electrical Engineering

基　　金：教育部博士点基金资助项目(20123218120017);南京航空航天大学青年科技创新基金(理工类)(NS2015039);江苏高校优势学科建设工程资助项目

摘　　要：电力电子器件是电力电子技术的重要基础。由于传统的硅电力电子器件的性能已经逼近其材料极限,很难再大幅提升硅基电力电子装置的性能。以碳化硅和氮化镓为代表的宽禁带半导体器件比硅器件具有更优的器件性能,成为电力电子器件新的研究发展方向。本文对碳化硅和氮化镓电力电子器件的商业化产品水平和实验室研究现状进行了综述和探讨,并对宽禁带半导体器件在未来功率器件市场中的应用前景进行了预测及展望。Power electronic devices lay the foundation of power electronic technology. Currently, power devices based on Silicon material exhibit some unavoidable physical limitations which limit the improvement of performance of Silicon based power converters. Power electronics devices based on Silicon Carbide and Gallium Nitride present more promising performance as a consequence of their outstanding properties and represent the new development trend of power electronic devices. This paper presents a review of recent progresses in both commercial and experimental development of Silicon Carbide and Gallium Nitride based power semiconductor devices. Moreover, an overview forecast in future applications of wide-bandgap power semiconductor is given in future power electronic device market.

关 键 词：宽禁带半导体器件 碳化硅 氮化镓 

分 类 号：TM46[电气工程—电器]