磁控共溅射低温制备多晶硅薄膜及其特性研究  

Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature

作　　者：段良飞[1,2] 杨雯[1,2] 张力元[1,2] 李学铭[1,2] 陈小波[1,2] 杨培志[1,2] 

机构地区：[1]可再生能源材料先进技术与制备教育部重点实验室,云南昆明650092 [2]云南师范大学太阳能研究所,云南昆明650092

出　　处：《光谱学与光谱分析》2016年第3期635-639,共5页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(U1037604);云南师范大学研究生创新资金项目资助

摘　　要：多晶硅在光电子器件领域具有较为重要的用途。利用磁控溅射镀膜系统,通过共溅射技术在玻璃衬底上制备了非晶硅铝(α-Si/Al)复合膜,将Al原子团包覆在α-Si基质中,膜中的Al含量可通过Al和Si的溅射功率比来调节。复合膜于N2气氛中进行350℃,10min快速退火处理,制备出了多晶硅薄膜。利用X射线衍射仪、拉曼光谱仪和紫外-可见光-近红外分光光度计对多晶硅薄膜的性能进行表征,研究了Al含量对多晶硅薄膜性能的影响。结果表明:共溅射法制备的α-Si/Al复合膜在低温光热退火下晶化为晶粒分布均匀的多晶硅薄膜;随着膜中Al含量逐渐增加,多晶硅薄膜的晶化率、晶粒尺寸逐渐增加,带隙则逐渐降低;Al/Si溅射功率比为0.1时可获得纳米晶硅薄膜,Al/Si溅射功率比为0.3时得到晶化率较高的多晶硅薄膜,通过Al含量的调节可实现多晶硅薄膜的晶化率、晶粒尺寸及带隙的可控。The polycrystalline silicon thin films play an important role in the field of electronics.In the paper,α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering.The contents of Al radicals encapsulated in theα-Si film can be adjusted by changing the Al to Si sputtering power ratios.The as-preparedα-Si films were converted into polycrystalline films by using a rapid thermal annealing（RTP）at low temperature of 350 ℃ for 10 minutes in N2 atmosphere.An X-ray diffractometer,and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films.The influences of Al content on the properties of the Pc-Si films were studied.The results showed that the polycrystalline silicon films were obtained fromα-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing.The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content,while the optical band gap was reduced.The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1.And a higher Crystallization rate（≥85%）of polycrystalline silicon films were obtained when the ratio was 0.3.The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films.

关 键 词：共溅射 铝诱导晶化 低温退火 多晶硅 特性 

分 类 号：TN304[电子电信—物理电子学]