PIN限幅器高功率微波损伤效应及失效分析  

HPM Damage Effect and Failure Analysis of PIN Limiter

作　　者：席善斌[1,2] 裴选[1,2] 高金环[1,2] 高兆丰[1,2] 黄杰[1,2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《环境技术》2016年第1期25-28,共4页Environmental Technology

摘　　要：以国产PIN限幅器为研究对象，分析了器件的工艺结构，开展了高功率微波注入效应研究，并对失效器件进行了失效分析。试验结果表明高功率微波注入会导致器件插入损耗超差而失效，限幅器输入端电容击穿短路丧失保护作用，PIN二极管结受损严重表现为低阻导通状态。借助多种失效分析手段获得了器件的烧毁形貌，认为器件发生烧毁的薄弱环节位于i层与n＋层的界面处，对潜在的失效机理进行了分析，并对工艺改进提出了相关建议。Based on the domestic PIN limiter, the manufacturing technology and structure is analyzed firstly; then high power microwave injection effect experiment is carried out; failure analysis is also to be conducted finally. Experimental results show that high power microwave injection can lead to device insertion loss out of tolerance and failure, the limiter input capacitor breakdown to short- circuit and loss of protective effect, the pin diode junction severely impaired and performs as low resistance state. Using a variety of failure analysis methods, the burned morphology of the device is obtained, and the weak link of the device burnt is located at the interface of the i layer and the n＋ layer. The potential failure mechanism is analyzed, and the related suggestions are put forward for process improvement.

关 键 词：高功率微波 PIN二极管 失效分析 FIB 

分 类 号：TN406[电子电信—微电子学与固体电子学]