变温量子阱生长技术对蓝光LED发光效率的影响  

Effect of the Variable Temperature Quantum Wells Grown Technology on the Blue LED Luminous Efficiency

作　　者：袁凤坡[1] 王波[1] 潘鹏[1] 王静辉[1] 唐景庭[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第3期224-228,共5页Semiconductor Technology

摘　　要：采用金属有机物化学气相沉积,在2英寸(1英寸=2.54 cm)蓝宝石图形衬底上通过引入变温量子阱生长技术,生长出了具有三角形量子阱(TQW)结构的发光二极管外延片。对比不同生长温度下的样品,得出了最优化的具有三角形量子阱结构外延片的生长条件。通过比较常规恒温量子阱结构和三角形量子阱结构外延片的光致发光光谱,发现TQW结构具有更窄的半峰宽和更高的发光强度。这主要是由于TQW改变了量子阱中的波函数分布,使电子空穴对的复合效率提高。外量子效率从传统的59.38%提高到60.75%,比传统的恒温量子阱提高了1.38%。By the metal organic chemical vapor deposition（ MOCVD）,the LED epitaxy wafers with the triangular quantum well（ TQW） structure were grown on 2 inches（ 1 inch = 2. 54 cm） c-plane pattern sapphire substrates using variable temperature quantum well grown technology. Comparing the samples under different growth temperatures,the optimized growth conditions of the epitaxy wafer with the triangular quantum well structure were obtained. Compared with the photoluminescence（ PL） of the epitaxy wafers with the conventional quantum wells structure and the TQW structure,the wafers with the TQW structure have a narrower full width of half maximum（ FWHM） and higher luminous intensity. The main reason is due to the wave function distribution in the quantum wells changed by the TQW,which increases the recombination efficiency of the electron-hole pair. The external quantum efficiency increases from 59. 38% to60. 75%,increased by 1. 38% compared with the conventional quantum wells structure.

关 键 词：氮化镓 量子阱(QW) 三角形量子阱(TQW) 发光二极管(LED) 金属有机化学气相沉积(MOCVD) 

分 类 号：TN304.054[电子电信—物理电子学] TN312.8