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作 者:刘猛[1] 白书欣[1] 李顺[1] 赵恂[1] 熊德赣[1]
机构地区:[1]国防科技大学航天科学与工程学院,湖南长沙410073
出 处:《国防科技大学学报》2016年第1期44-49,共6页Journal of National University of Defense Technology
基 金:国防科技大学预研基金资助项目(JC11-01-07)
摘 要:采用磁控溅射法结合结晶化热处理工艺在SiC颗粒表面成功制备了金属Mo涂层,分析Mo涂层的成分和形貌;采用热压烧结工艺制备SiCp/Cu复合材料,重点对比分析Mo界面阻挡层厚度对复合材料导热性能的影响。结果表明:磁控溅射法能够在SiC颗粒表面沉积得到Mo涂层,随溅射时间的延长,Mo涂层的厚度增加、粗糙度增大,且磁控溅射后SiC颗粒表面直接得到的Mo涂层为非晶态,结晶化热处理后,变为致密平整的晶态Mo涂层。磁控溅射时间对Mo涂层厚度和复合材料导热性能影响明显。随磁控溅射时间的增加,复合材料的热导率呈先增后减趋势。采用磁控溅射9h镀Mo改性并经过800℃结晶化热处理的SiC复合粉体在850℃下热压烧结制备的SiCp/Cu复合材料(VSiC=50%),其热导率达到了最高值274.056W/(m·K)。The molybdenum coating was successfully deposited on the surface of silicon carbide by the magnetron sputtering method and the crystallized heat treatment process,and its surface morphology and chemical composition were analyzed. The Si Cp/ Cu composite was prepared by vacuum hot- pressing sintering,and the effects of the interfacial layer thickness on the thermal conductivity property were studied in detail. Results are as follows: molybdenum coating can be successfully deposited on the surface of silicon carbide by magnetron sputtering method,the roughness and the thickness of the film are enhanced with the sputter time postponed,and the molybdenum on the surface is in amorphous state. After the crystallized heat treatment,the molybdenum coating is in densification crystalline state. The sputtering time affects the thickness of the Mo coating and the thermal conductivity of Si Cp/ Cu obviously. With the time postponed,the thickness of the Mo coating is increased. And the thermal conductivity increases firstly and then decreases as the sputtering time increases. The thermal conductivity of the Si Cp/ Cu composite in 800 ℃crystallized heat treatment fabricated by the 9 h Mo coated Si C powders in 850 ℃ hot pressing can reach 274. 056 W /( m·K) when the volume fraction of Si C is about 50%.
关 键 词:SICP/CU复合材料 界面改性 磁控溅射 热压烧结 热导率
分 类 号:TB33[一般工业技术—材料科学与工程]
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