石墨烯-GaN肖特基紫外探测器  

Graphene-GaN Schottky Ultraviolet Detector

作　　者：许坤[1] 徐晨[1] 郭旺[1] 解意洋[2] 

机构地区：[1]北京工业大学光电子技术省部共建教育部重点实验室,北京100124 [2]中国科学院半导体研究所,北京100083

出　　处：《半导体光电》2016年第1期30-35,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61376049)

摘　　要：报道了使用石墨烯作为阳极材料的GaN肖特基型紫外探测器。介绍了光敏面为1mm×1mm的新型肖特基紫外探测器的制备过程。并对器件进行了响应光谱、I-V特性测试。器件的响应光谱较为平坦,峰值响应度为0.175A/W;通过对石墨烯进行化学修饰,使峰值响应度增加到0.23A/W。并根据热电子发射理论,计算出了器件掺杂前后的肖特基势垒高度分别为0.477eV和0.882eV,验证了器件性能的提高主要原因是石墨烯功函数的增加。A kind of GaN Schottky ultraviolet detector with graphene as the anode was reported,and the fabrication of the devices with a photosurface as large as 1mm×1mm was introduced.The I-V characteristics and response spectrum of the devices were measured.The response spectrum is flat and the peak value is 0.175A/W.Then it was improved to 0.23A/W by making graphene chemical doping.Based on the thermionic emission theory,Schottky barrier height was calculated to be 0.477 eV and 0.882 eV before and after chemical doping,which abundantly proves that the performance improvement is mainly due to the increase of work function of graphene.

关 键 词：GAN 肖特基 紫外探测器 石墨烯 响应光谱 

分 类 号：TN364.2[电子电信—物理电子学]