基于AFM硅表面局域阳极氧化的特性研究及纳米计量标准样板的制作  

Characteristics of Local Anodic Oxidation of Silicon Surfaces by AFM and Fabrication of Nanoscale Metrology Standard Sample

作　　者：程锋[1] 马艳[1] 马蕊[1] 李同保[1] 

机构地区：[1]上海市特殊人工微结构材料与技术重点实验室,同济大学物理科学与工程学院,上海200092

出　　处：《纳米技术与精密工程》2016年第2期150-157,共8页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(10804084,91123022,61565004);中国科学院纳米器件与应用重点实验室开放基金资助项目(14CS01)

摘　　要：基于原子力显微镜(AFM)在硅(Si)表面进行局域阳极氧化的技术,以其成本低、易加工等优势被广泛应用于各种纳米元器件的制造.本文基于AFM在Si表面进行局域阳极氧化来制作纳米计量标准样板,首先分别在接触模式和轻敲模式下进行实验,定量分析了偏置电压、移动速率和刻蚀方向等主要参数对所得纳米线尺寸的影响,从而得到标准样板制作的最佳加工参数:在探针针尖电压为-7 V、移动速率为0.3μm/s、Z Distance值为-45 nm时,可以产生稳定的标准样板结构;同时两种模式下对纳米氧化线的影响趋势相同.最后在此最佳参数下,利用AFM在Si表面进行局域阳极氧化,加工得到了一维线光栅、二维光栅和圆形光栅结构.Local anodic oxidation technology of silicon（ Si） surfaces by AFM,for its low cost,easy processing and other advantages,has been widely used in the manufacturing of various nano-components.The nanoscale metrology standard sample was fabricated with the technique of local anodic oxidation of Si surface by AFM in this paper. First experiments were performed in contact mode and tapping mode respectively,and the effects of main parameters including bias voltage,moving speed and etching direction on the the size of nanowires were specifically evaluated. The optimal processing parameters were obtained as follows： the tip voltage of- 7 V,the moving speed of 0. 3 μm / s,and the Z Distance value of- 45 nm. Furthermore,both modes have the same effect tendency on the oxide nanowires. Finally,under the optimal parameters,one-dimensional line grating,two-dimensional grating and a circular grating structures were produced by using the AFM local anodic oxidation of Si surface.

关 键 词：原子力显微镜 阳极氧化 标准样板 光栅 

分 类 号：TN304.12[电子电信—物理电子学]