第三代半导体材料SiC晶体生长设备技术及进展  

Review on Technology of Growth Equipment for the Third Generation Semiconductor-SiC Crystal

作　　者：郑泰山 阮毅 王寅飞 

机构地区：[1]广东省机械研究所,广东广州510635

出　　处：《机电工程技术》2016年第3期20-23,共4页Mechanical & Electrical Engineering Technology

基　　金：广东省科技计划资助项目(编号:2014B070706031)

摘　　要：第三代半导体设备技术是第三代半导体技术发展的重要支撑和基础。简要介绍了以SiC为代表的第三代半导体材料,重点介绍了SiC晶体生长方法,SiC晶体生长设备基本构成,设备技术国内外进展情况,最后指出了将设备研发和生长工艺相结合研制出更加成熟的SiC晶体生长设备的重要性。The third generation semiconductor equipment technologies are important base supporting the developments of the third generation semiconductor technologies. The third generation semiconductor is briefly introduced using Si C as the representative in this paper. The technologies of Si C crystal growth, equipment, and the domestic and foreign developments are mainly reviewed. In the end, it is pointed out that the synergetic development of the equipment and the growth technique of Si C crystal growth equipment is important.

关 键 词：第三代半导体 SIC晶体 SiC晶体生长设备 SiC晶体生长工艺 

分 类 号：TN304.05[电子电信—物理电子学]