镓锌氧化物半导体薄膜的晶粒生长特性及其微结构研究  

Grain Growth and Microstructure of Gallium-Zinc Oxide Semiconductor Thin Films

作　　者：钟志有[1] 陆轴 龙路[1] 康淮[1] 

机构地区：[1]中南民族大学电子信息工程学院智能无线通信湖北省重点实验室,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2016年第1期75-80,共6页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：湖北省自然科学基金资助项目(2011CDB418);中央高校基本科研业务费专项资金资助项目(CZW14019)

摘　　要：采用Zn O:Ga3O2高密度陶瓷靶作为溅射源材料,利用射频磁控溅射技术在玻璃基片上制备了镓锌氧化物(Ga Zn O)半导体薄膜.基于X射线衍射仪的测试表征,研究了薄膜厚度对Ga Zn O样品晶粒生长特性和微结构性能的影响.研究结果表明:所制备的Ga Zn O样品为多晶薄膜,并且都具有六角纤锌矿型结构和(002)晶向的择优取向生长特性;其(002)取向程度、结晶性能和微结构参数等均与薄膜厚度密切相关.随着薄膜厚度的增大,Ga Zn O样品的(002)择优取向程度和晶粒尺寸表现为先增大后减小,而位错密度和晶格应变则表现为先减小后增大.当薄膜厚度为510 nm时,Ga Zn O样品具有最大的(002)晶向织构系数(2.959)、最大的晶粒尺寸(97.8 nm)、最小的位错密度(1.044×1014m-2)和最小的晶格应变(5.887×10-4).The gallium-zinc oxide （ GaZnO） semiconductor thin films were deposited on glass substrates by radio-frequency magnetron sputtering technique using the ceramic target fabricated by sintering the mixture of ZnO and Ga2 O3 nanometer powder. The influence of thickness on grain growth characteristics and microstructure of the deposited films was investigated by X-ray diffractometer. The results show that the deposited thin films with the hexagonal crystal structure are polycrystalline and have a strongly preferred orientation of （002） plane. The grain growth and mirostructure properties of the thin films are closely related to the thickness. As the thickness increases, the texture coefficient of （ 002 ） plane and grain size firstly increase and then decrease, while the dislocation density and lattice strain exhibit the reverse variation trend. The GaZnO thin film with the thickness of 510 nm possesses the best crystallite quality and microstructural properties, with the highest texture coefficient of （002） plane （2. 959）, the largest grain size （97. 8 nm）, the smallest dislocation density （1.044 ×10^（14） m-2） and the minimum lattice strain （5.887 ×10^（ -4））.

关 键 词：磁控溅射 氧化锌薄膜 晶粒生长 微结构 

分 类 号：TM914[电气工程—电力电子与电力传动]