磷锗锌晶体生长技术研究进展  

Research Development of ZnGeP_2 Single Crystal Growth Technique

作　　者：赵欣[1] 朱世富[2] 李梦[1] 

机构地区：[1]中国民用航空飞行学院,四川广汉618307 [2]四川大学材料科学与工程学院,成都610064

出　　处：《半导体技术》2016年第4期241-248,260,共9页Semiconductor Technology

基　　金：国家自然科学基金资助项目(50732005);四川省科技厅基金资助项目(2015ZR0034);民航局科技创新引导资金资助项目(20150212);中国民用航空飞行学院科研基金资助项目(J2014-92;Q2012-126)

摘　　要：磷锗锌(ZnGeP_2)单晶体是一种性能优异的红外非线性光学晶体材料,被广泛应用于各种先进的光学器件。研究ZnGeP_2晶体的生长方法,对低成本制备大体积、高质量的ZnGeP_2晶体具有重要意义。介绍了ZnGeP_2晶体的结构和应用领域,给出了ZnGeP_2多晶合成与单晶生长技术研究发展的最新动态,并基于晶体生长原理以及生长条件控制方法的差异,综述了水平温度梯度冷凝(HGF)法、液封提拉(LEC)法、高压气相(HPVT)法和垂直布里奇曼(VB)法4种主要的ZnGeP_2单晶体生长方法的优缺点;重点阐述了较成熟的HGF和VB法生长ZnGeP_2晶体的影响因素和研究进展,提出了ZnGeP_2单晶制备技术存在的主要问题和今后的发展方向。ZnGeP_2 has been known as one of the most promising infrared nonlinear optical crystal materials. It has been widely used in several kinds of advanced optical devices. It is of crucial importance to study the growth methods of ZnGeP_2 monocrystalline in the preparation of ZnGeP_2 monocrystalline with large volume,high quality and low cost. The crystal structure and application field of the ZnGeP_2 are introduced. The latest developments in polycrystal synthesis and single crystal growth of ZnGeP_2 are summarized. In addition,the main growth methods of ZnGeP_2 single crystal,including horizontal gradient freeze（ HGF） method, liquid encapsulated czochralski（ LEC） method, high-pressure vapor transport（ HPVT） method and vertical Bridgman（ VB） method are reviewed based on the crystal growth principles and the differences in growth methods. The advantages and disadvantages of these methods are also discussed. The recent advances and influential factors of ZnGeP_2 single crystal growth by HGF and VB,which are two comparative mature methods,are intensively investigated. The main problems and future development trends of the preparation technology of ZnGeP_2 monocrystalline are presented.

关 键 词：磷锗锌(ZGP)单晶体 多晶合成 单晶生长 水平温度梯度冷凝(HGF)法 垂直布里奇曼(VB)法 

分 类 号：TN304.26[电子电信—物理电子学]