MEMS悬浮结构深反应离子刻蚀保护方法对比研究  

Comparison Research on the Protection Methods for MEMS Suspended Structure Deep Reactive Ion Etching

作　　者：何凯旋 黄斌 段宝明 宋东方 郭群英 

机构地区：[1]华东光电集成器件研究所,安徽蚌埠233042

出　　处：《传感技术学报》2016年第2期202-207,共6页Chinese Journal of Sensors and Actuators

摘　　要：分别对基于硅玻键合与硅硅键合的MEMS加工工艺中悬浮结构深反应离子刻蚀保护方法进行对比研究,获得最佳结构刻蚀保护方法。基于硅玻键合工艺的最佳刻蚀保护方法:在结构层背面溅射金属作为保护层;基于硅硅键合工艺的最佳刻蚀保护方法:将结构刻通区域衬底硅暴露及结构层背面制作图形化的Si O2保护层相结合的方式保护。结构保护后,经长时间过刻蚀,结构依然完整无损。The protection methods for MEMS suspended structure deep reactive ion etching based on silicon-glassbonding and silicon direct bonding are studied in comparison experiments. The best protection method for processbased on silicon-glass bonding is to sputter a metal layer on the backside of the structure. For the process based onsilicon direct bonding,the best method is to combine the following two methods of exposing the silicon substrate un-der the etching through area and using graphed silicon oxide as protection layer. The structure is still excellent afterlong time overetch by the protection process.

关 键 词：MEMS 硅玻键合 硅硅键合 深反应离子刻蚀 保护方法 

分 类 号：TP393[自动化与计算机技术—计算机应用技术]