GaAs半导体表面的等离子氮钝化特性研究  

Nitrogen-plasma Passivation of GaAs Semiconductor Surface

作　　者：许留洋[1] 高欣[1] 袁绪泽 夏晓宇[1] 曹曦文 乔忠良[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2016年第4期428-431,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61176048;61177019;61308051);吉林省科技发展计划(20150203007GX;20130206016GX);中物院高能激光重点实验室基金(2014HEL01)资助项目

摘　　要：采用射频(RF)等离子方法,对Ga As样品进行了150 W高功率等离子氮钝化及快速退火处理。经过该方法钝化后的样品,光致发光(PL)强度上升了91%。XPS分析得出,Ga As样品表面的氮化效果随着氮等离子体功率的增加而逐渐趋于明显。氮化后的样品表面未发现氧化物残余。样品在空气中加热放置30 d,PL强度下降不明显,说明表面钝化层具有良好的稳定性。Ga As substrate was treated by N＋with 150 W RF plasma and followed by rapid thermal annealing. The PL intensity increased by 91%. XPS analysis indicates that GaAs surface has been nitrided after high power RF N＋plasma processing,and the nitridation effect is enhanced under higher RF power. No oxide is found on nitrided GaAs surface. The prepared samples were kept on heat plate in open air for PL stability evaluation,little drop was found during a 30 days test.

关 键 词：等离子 XPS PL GAAS 

分 类 号：TN248.4[电子电信—物理电子学]