氧化锌材料p型掺杂研究进展  

Recent Research on p-type Doping of ZnO

作　　者：谭蜜 张红[1,2] 李万俊[1,2] 秦国平[1,2] 阮海波[3] 孔春阳[1,2] 

机构地区：[1]重庆师范大学物理与电子工程学院,重庆401331 [2]重庆市光电功能材料重点实验室,重庆401331 [3]重庆文理学院新材料技术研究院,重庆402160

出　　处：《西华师范大学学报（自然科学版）》2016年第1期1-9,38,共10页Journal of China West Normal University(Natural Sciences)

基　　金：国家自然科学基金项目(51472038;51502030)

摘　　要：氧化锌(ZnO)是II-VI族直接带隙化合物半导体材料,室温下禁带宽度为3.37 e V,激子束缚能高达60me V,是制造蓝紫外发光、探测以及激光器件的理想材料。高质量n型和p型ZnO以及同质p-n结的制备是实现器件化的关键。目前,n型ZnO的制备技术已趋于成熟,但高质量稳定的p型ZnO的缺乏已成为制约其器件化的瓶颈。在过去的十余年里,通过国内外科研工作者的不懈努力,在理论和实验上都取得了显著的成果。本文主要概述了ZnO材料的p型掺杂、p型导电机制以及p-ZnO基光电器件的研究进展,同时初步探索了ZnO材料p型导电稳定性问题。Zinc oxide（ ZnO）,a typical direct wide bandgap（ 3. 37 e V） semiconductor,has attracted an increasing interest tothe optoelectronics field. Its large exciton binding energy of 60 me V endows it with high radiative recombination efficiency,a unique advantage in light emitting and lasing devices. The fabrications of high quality n- and p-type ZnO as well as p-n junction are the key steps to realize these applications. although the techniques of fabricated n-type ZnO has been well developed,the reliable p type doping of the material remains a major challenge to optoelectronic applications,despitethe fact that p-doping of ZnO has been improved and that marked results in experiment and theory have been achieved during the past ten years. In this review,we examined the recent research progress in p-type doping of ZnO,including the p-type performance,the mechanism of p-type conduction,and pZnO based photoelectric devices,and so on. Moreover,based on the challenges of the current researches,we summarized the factors that may affect the p-type doping,especially the stability of p-type ZnO materials.

关 键 词：ZNO P型掺杂 p型导电机理 光电器件 稳定性 

分 类 号：O472[理学—半导体物理] O484[理学—物理]