脉冲偏压对直流磁控溅射制备CuNiIn薄膜过程中钛合金基体的影响  

Effect of Pulse Bias on Titanium Alloy Substrate with CuNiIn Films Prepared by DC Magnetron Sputtering

作　　者：袁建鹏[1,2,3] 

机构地区：[1]北京矿冶研究总院,北京100160 [2]北京市工业部件表面强化与修复工程技术研究中心,北京102206 [3]特种涂层材料与技术北京市重点实验室,北京102206

出　　处：《热喷涂技术》2016年第1期104-108,52,共5页Thermal Spray Technology

摘　　要：用直流磁控溅射技术制备CuNiIn 薄膜,研究了电源脉冲偏压对钛合金基体结构和力学性能的影响.采用热电偶丝实时监控沉积过程中的基体温度变化,利用截面金相法对比分析了基体在膜层制备前后结构和形貌的变化情况,利用高温拉伸试验机测量了有CuNiIn 膜层的试样和无膜层试样的抗拉强度和弹性模量.结果表明：20% 低占空比、500V 的脉冲偏压下,基体沉积过程中的温度可保持在300℃以下;膜层制备过程对钛合金基体组织和力学性能的影响很小.CuNiIn thin films were deposited by DC magnetron sputtering technology.The effect of Pulse biason the Temperature,Structure and Mechanical properties of Titanium alloy Substrate was studied.Temperaturevariation of substrate was monitored by thermocouple wire.Analysis of matrix structure and morphology wasmade before and after the film preparation by cross section metallography.Tensile strength and elastic modulusof the Coated with CuNiIn coating and uncoated specimens were measured by high temperature tensile testingmachine.The results show that the temperature of the substrate during the deposition process can be controledbelow300℃with a Low duty cycle(20%)and voltage(500V).The Film preparation process has almost noeffect on the microstructure and mechanical properties of the titanium alloy substrate.

关 键 词：CuNiIn薄膜 磁控溅射 脉冲偏压 基体温升 组织性能 

分 类 号：TG174.4[金属学及工艺—金属表面处理]