HF气相刻蚀技术及其在MEMS加速度计中的应用  

HF Gas-phase Etching Technology and Its Application in MEMS Accelerometer

作　　者：方佼 於广军 闻永祥 马志坚[1] 季锋[1] 闵猛猛 

机构地区：[1]杭州士兰集成电路有限公司,浙江杭州310083

出　　处：《中国集成电路》2016年第4期73-77,共5页China lntegrated Circuit

摘　　要：本文介绍了一种用于微结构干法释放的HF气相刻蚀技术。通过调节工艺参数(包括腔体压力,HF流量,乙醇流量,氮气流量)研究其对二氧化硅刻蚀速率和均匀性的影响,得到刻蚀速率在500魡/min左右,均匀性5%左右的工艺菜单。该技术运用于MEMS加速度计中,成功实现了梳齿结构和质量块的无粘连释放。An anhydrous HF gas-phase etching technology for dry release of microstructures was introduced in this paper. We investigated the influence of the process parameters（including chamber pressure, HF gas flow, ethanol gas flow and nitrogen gas flow）on silicon oxide etching rate and uniformity. Through the above experiments, an optimization recipe was got, which etching rate was about 500魡/min and uniformity was about 5%. Comb and mass structures achieve non-sticking release by applying this technology in fabrication of MEMS accelerometer.

关 键 词：气相氟化氢 牺牲层腐蚀 无粘连释放 刻蚀速率和均匀性 微加速度计 

分 类 号：TH824.4[机械工程—仪器科学与技术]