PLD法在c面蓝宝石衬底上制备纤锌矿ZnS外延薄膜  

Epitaxial growth of wurtzite ZnS thin films on c-plane sapphire substrates by PLD

作　　者：张蕾[1] 方龙[1] 刘攀克 刘越彦[1] 黎明锴[1] 何云斌[1] 

机构地区：[1]湖北大学材料科学与工程学院功能材料绿色制备与应用教育部重点实验室,武汉430062

出　　处：《功能材料》2016年第5期224-226,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51002049;61274010);湖北省教育厅优秀中青年人才资助项目(Q20120104)

摘　　要：采用脉冲激光沉积方法以ZnS为靶材c面蓝宝石为衬底制备了一系列的ZnS薄膜,并采用四圆单晶衍射仪研究了薄膜的晶体结构及其与衬底的取向关系。首先研究了沉积温度对ZnS薄膜质量的影响,结果表明,所有制备的ZnS薄膜均为六方纤锌矿结构;在衬底温度为750℃时所制备的薄膜具有较好的晶体质量,并表现出与蓝宝石衬底明确的外延关系[ZnS(001)∥Al_2O_3(001)且ZnS(110)∥Al_2O_3(110)]。进一步研究了在750℃下加入不同厚度的ZnO缓冲层对于ZnS薄膜晶体质量的影响,结果表明在沉积ZnS薄膜前先沉积一层ZnO薄膜缓冲层可以进一步有效提高ZnS薄膜的晶体质量和面外取向性,其中在沉积时间为2min的ZnO缓冲层上制备的ZnS外延薄膜晶体质量最好,其(002)面摇摆曲线半高宽为1.35°。本文结论对于研究ZnS薄膜制备光电器件具有重要的意义。A series of ZnS thin films were fabricated by pulsed laser deposition on c-sapphire using a ZnS target,and characterized by X-ray diffraction in terms of the crystal structure and orientation with respect to the sub-strate. Firstly, we have investigated the growth temperature effects on the quality of ZnS films in the tempera-ture range of 400-750 ℃. It was found that all ZnS thin films have a wurtzite structure, and the crystalline qual-ity of the ZnS films improves with increasing deposition temperature. The highest quality ZnS films were ob-tained at 750 ℃, which show epitaxial relationship with the substrate as ZnS（001）//Al2O3 （001） and ZnS（110）//Al2 O3 （110）. Then we grew ZnS films with ZnO buffer layers deposited at different time （1, 2 and 3 rain） andfixed temperature of 750 ℃. The results suggest that applying a ZnO buffer layer can effectively improve thecrystal quality of ZnS films. In particular, the ZnS film grown with a 2rain-deposited ZnO buffer layer exhibitsa rocking curve half width of （002） plane as small as 1.35%. These results are of importance when consideringZnS films for making ZnS related optoelectronic devices.

关 键 词：脉冲激光沉积 ZNS薄膜 缓冲层 外延生长 晶体结构 

分 类 号：O472[理学—半导体物理]