工艺气体比例对微波MOCVD沉积氧化铝膜性能影响  

Influenec of process gas ratio on the properties of alumina film deposited by microwave mocvd thchnology

作　　者：张健[1] 巴德纯[1] 赵崇凌[1] 杜广煜[1] 刘坤[1] 

机构地区：[1]东北大学机械及自动化学院,沈阳110004

出　　处：《功能材料》2016年第5期227-230,共4页Journal of Functional Materials

基　　金：教育部博士点基金资助项目(20120042110031)

摘　　要：AlO薄膜作为高效太阳能电池中P层钝化薄膜引起了光伏龙头企业的关注。本文利用自主研发的线性微波等离子增强化学气相沉积系统(LMW-MOCVD)在单晶硅基体上用不同N_2O和TMA特气比例制备氧化铝膜层样品,并通过SEM、SE800椭偏仪对薄膜的成分、表面形貌、厚度、沉积速度、折射率测试分析。实验结果表明,随着N_2O比例增大,薄膜中O/Al原子比例有上升趋势;膜层沉积速度显著降低;膜层折射率开始趋于稳定而后迅速降低。所以,工艺气体比例对LMW-MOCVD沉积氧化铝膜的性能有明显影响。AlO, as Surface passivation film to P type silicon in high efficiency solar cells, caused concern by lead-ing company.AlO thin film were deposited onto monocrystalline silicon using self-developed LMW-PECVDtechnology with difference process gas proportion between N2 O and TMA. Composition and surface morphologyof the films were investigated by SEM. SES00 spectroscopic ellipsometer was employed to measure thicknessand refractivity of the films. The result shows that, with the increasing of N2 O ratio, element ratio of O/A1 infilm is on the rise deposition rate of AlO film remarkably decrease refractivity of the film began to level off andthen decreased rapidly. So,Process gas proportion plays an important role in AlO films.

关 键 词：线性微波源 氧化铝薄膜 工艺气体比例 折射率 沉积速度 

分 类 号：O484[理学—固体物理] TB43[理学—物理]