一种微波功率LDMOS器件非线性模型  

An new nonlinear model for the microwave power LDMOS

作　　者：冯彬[1] 李静强[1] 胡志富[1] 李亮[1] 

机构地区：[1]河北半导体研究所,河北石家庄050051

出　　处：《电子元件与材料》2016年第6期74-77,共4页Electronic Components And Materials

摘　　要：对微波功率LDMOS器件进行测试,提出一种新的非线性模型,通过小信号参数提取,建立LDMOS的小信号模型,对多偏置下本征电容的提取,建立LDMOS本征电容的非线性模型,加入LDMOS的直流IV模型并以此为基础确立了微波功率LDMOS的大信号模型,经过此模型的LoadPull仿真及芯片测试对比,表明了该模型可以较准确地模拟LDMOS的微波特性。采用该模型设计了一种功率管放大器,通过最终测试与仿真结果对比,证明了该模型的实用性。A nonlinearity model was deduced for LDMOS through the measurement of microwave power LDMOS. Bythe parameters extraction of LDMOS, a small signal model of LDMOS was built. By analyzing the intrinsic capacitorextracted under the multi-bias conditions, the capacitor nonlinearity model was got. A LDMOS DC-IV model was also builtthrough DC-IV measurement. Base on these models, a large signal nonlinear model was got for microwave power LDMOS.Compared to the LoadPull simulation and measurement results, the LDMOS model is proved that it could be used todescribe the microwave performance of LDMOS precisely. By using this model, a power amplifier was designed. Themeasurement and simulation result contrast indicates the practicality of this model.

关 键 词：LDMOS 小信号模型 微波 参数提取 大信号模型 LoadPull测试 

分 类 号：TN61[电子电信—电路与系统]