基于溅射后腐蚀ZnO的单结微晶硅太阳电池中的陷光研究  

LIGHT TRAPPING OF SINGLE JUNCTION MICROCRYSTALLINE SILICON SOLAR CELLS BASED ON SPUTTERED AND WET-ETCHED ZnO

作　　者：白立沙[1] 刘伯飞[1] 赵慧旭[1] 赵颖[1] 张晓丹[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所南开大学光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,天津300071

出　　处：《太阳能学报》2016年第4期801-807,共7页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2013AA050302);高等学校博士学科点专项科研基金(20120031110039)

摘　　要：采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术,研究衬底表面形貌和电学特性的变化对微晶硅单结太阳电池性能的影响。通过对不同腐蚀时间溅射ZnO∶Al衬底及基于此的微晶硅单结电池进行研究发现:衬底表面横纵特征尺寸可通过腐蚀时间进行有效调控,光电性能的权衡使其存在最优化衬底腐蚀时间,从而使微晶硅单结电池达到最大光吸收和高电学性能。对衬底陷光结构和电池工艺进一步调整,获得初始效率达10.01%的单结微晶硅薄膜太阳电池,将其应用到非晶硅/非晶硅锗/微晶硅三结叠层电池中,电池效率可达14.51%。The very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） process was used to study the influence of the surface morphologies and electrical properties of substrates on hydrogenated microcrystalline silicon （mc-Si：H） solar cells. The researches of magnetron-sputtered and texture-etched ZnO：AI substrates with different etched times and mc-Si：H single junction solar cells based on the substrates show that the transverse and longitudinal feature sizes of the substrates can be effectively modulated by changing etching times. An optimum etching time, which gives rise to mc-Si：H single junction solar cells with the maximum light absorption and high electrical performance, exists by achieved taking the trade-off of optical and electrical performance into account. An initial efficiency of 10.01% is for single junction μc-Si：H solar cells by optimizing the light trapping architecture and PECVD process. The well-designed mc-Si：H cells are used in a-Si：H/a-SiGe：H/μc-Si：H triple junction solar cells, the initial efficiency reaches up to 14.51%.

关 键 词：微晶硅薄膜太阳电池 VHF-PECVD 衬底 陷光 

分 类 号：O475[理学—半导体物理]