KH550-GO复合栅介质低压氧化物薄膜晶体管  

Low-voltage oxide thin film transistor made of KH550-GO composite dielectrics

作　　者：黄钰凯[1] 凌智勇[1] 邵枫[2] 温娟[1] 

机构地区：[1]江苏大学机械工程学院,江苏镇江212013 [2]南京大学电子科学与工程学院,江苏南京210000

出　　处：《电子元件与材料》2016年第5期44-47,共4页Electronic Components And Materials

基　　金：江苏大学高级人才科研启动基金(No.14JDG049)

摘　　要：采用旋涂法制备硅烷偶联剂-氧化石墨烯(KH550-GO)新型复合栅介质薄膜,由于栅介质层和沟道层界面处明显的双电层效应,单位面积电容高达2.18×10^(–6)F/cm^2。通过自组装法,借助磁控溅射仪,仅需一次掩膜,即可同时生成晶体管的沟道与源漏电极。利用半导体参数分析仪在室温黑暗的条件下测量该晶体管的电学特性,结果表明,KH550-GO栅介质氧化物薄膜晶体管具有优良的电学性能,其工作电压仅为2 V、饱和电流为580μA、亚阈值摆幅108 m V/dec、开关比4×10~7、场效应迁移率16.7 cm^2·V^(-1)·s^(-1)。Spin coated-processed silane coupling agents（KH550-GO） composite proton conductor film shows a large specific gate capacitance of 2.18×10–6 F/cm2 due to the interfacial electric-double-layer effect. Low-voltage oxide（IZO） TFTs gated by a KH550-GO composite proton conductor film were self-assembled by only one shadow-mask. Electrical characteristics of the devices were measured by a Keithley 4200 SCS semiconductor parameter analyzer at room temperature under the condition of darkness. The results show that KH550-GO oxide thin film transistors possess good electrical properties, the operating voltage is only 2 V, the saturation current, the subthreshold gate voltage swing, the current on/off ratio, and the field-effect mobility are estimated to be 580 μA, 108 m V/dec, 4×107, and 16.7 cm2·V-1·s-1, respectively.

关 键 词：有源层 非晶铟锌氧化物 双电层效应 KH550-GO复合栅介质 薄膜晶体管 场效应迁移率 

分 类 号：TN321.5[电子电信—物理电子学]