2～8GHz宽带GaN功率放大器MMIC  

2-8 GHz Ga N broadband monolithic power amplifier MMIC

作　　者：王会智[1,2] 高学邦[2] 刘波 张力江[2] 冯志红 

机构地区：[1]专用集成电路国家重点实验室,河北石家庄050051 [2]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《电子元件与材料》2016年第5期56-59,共4页Electronic Components And Materials

摘　　要：基于0.25μm Ga N HEMT工艺,研制了一款两级拓扑放大结构的28 GHz宽带功率放大器MMIC（单片微波集成电路）。MMIC所用Ga N HEMT器件结构经过优化,提高了放大器的可靠性和性能;电路采用多极点电抗匹配网络,扩展了放大器的带宽,减小了电路的损耗。测试结果表明,在28 GHz测试频带内,在脉冲偏压28 V（脉宽1 ms,占空比30%）时,峰值输出功率大于30 W,功率附加效率大于25%,小信号增益大于24 d B,输入电压驻波比在2.8以下,在6 GHz处的峰值输出功率达到50 W,功率附加效率达到40%;在稳态偏压28 V时,连续波饱和输出功率大于20 W,功率附加效率大于20%。尺寸为4.0 mm×5.0 mm。Based on 0.25 μm GaN HEMT technology, a 2-8 GHz broadband Ga N power amplifier MMIC（Monolithic Microwave Integrated Circuit） with two-stage topology was developed.The GaN HEMT device structure of amplifier was optimized to improve performance and reliability, and adopted multi-pole reactance matching network to expand the bandwidth of amplifier and reduce inserting loss of output stage. At frequency of 2.0 GHz to 8.0 GHz, the amplifier delivers a small signal gain larger than 24 d B, input-port VSWR less than 2.8, and a peak saturated output power of 30 W with greater than 25% power-added efficiency at a pulsed drain-source voltage VDS=28 V（PW：1 ms, Duty Cycle：30%）. Especially at 6 GHz, average peak output power achieves 50 W with power-added efficiency of 40%. At DC drain-source voltage VDS=28 V biased operation, the amplifier provides saturated output power larger than 20 W with greater than 20% power-added efficiency over the same frequency range. The size of MMIC is 4.0 mm×5.0 mm.

关 键 词：氮化镓 功率放大器 28 GHZ 单片微波集成电路 宽带 两级拓扑 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75