基于Surfscan系统的GaAs/Ge反向畴  

GaAs / Ge Antiphase Domain Based on the Surfscan System

作　　者：师巨亮[1] 牛晨亮[2] 韩颖[1] 夏英杰[1] 张曦[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《微纳电子技术》2016年第6期406-409,419,共5页Micronanoelectronic Technology

摘　　要：对于GaAs/Ge反向畴(APD)的表征,常用的测试方法是扫描电子显微镜(SEM)、透射电子显微镜(TEM)和原子力显微镜(AFM)等,这些方法都存在局部表征所带来的测试误差问题。为此引入了Surfscan系统,该检测系统具有快速、全片和量化结果等优点。首先,利用Surfscan结合SEM对反向畴差别较大的样品进行了测试表征,结果显示结合SEM的局域形貌表征和Surfscan的全片表征,可以对反向畴进行更加准确的表征。通过进一步优化工艺温度,对Surfscan在反向畴差别相对较小的情况下的应用进行了研究,结果显示:利用Surfscan优化工艺温度是非常有效的,而且对于该实验,当反向畴被有效抑制时,反向畴主要表现为雾化缺陷(Haze)。上述两个应用说明了Surfscan在反向畴研究中非常具有实用价值。The common test methods to characterize the GaAs/Ge antiphase domain（APD） are scanning electron microscope（SEM）,transmission electron microscope（TEM）,atomic force microscope（AFM） and so on.There are test errors introduced by the local characterization with the measurements.For resolving these problems,the Surfscan system with the advantages of fast whole sample testing and quantitative results was introduced.Firstly,the samples with large difference of the APD were tested and characterized by the Surfscan and SEM.The results show that the APD can be characterized more accurately by combining the local morphology characterization of the SEM and the whole sample characterization of the Surfscan.The applications of the Surfscan in the situations of the APD with relatively small difference were researched by optimizing the process temperature furhter.The results show that the Surfscan is very effective for optimizing the process temperature,and the APD represents as the atomizing defect（Haze） when it is restrained for this experiment.The two applications show that the Surfscan is very valuable in the research of the APD.

关 键 词：Surfscan系统 反向畴(APD) 颗粒 HAZE GAAS/GE 

分 类 号：TN304.07[电子电信—物理电子学]