Supported by the National Natural Science Foundation of China(Grant Nos.61975230,61635011,61804177 and 11804382);the National Key Research and Development Program of China(Grant No.2018YFB2200104);Beijing Municipal Science and Technology Commission(Grant No.Z191100004819010);the Key Research Program of Frontier Sciences,CAS(Grant No.QYZDB-SSW-JSC009)。
GaAs/Ge heterostructures have been employed in various semiconductor devices such as solar cells,high-performance CMOS transistors,andⅢ-Ⅴ/Ⅳheterogeneous optoelectronic devices.The performance of these devices is di...